SRAM
US8441076B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2011 |
| Grant date | May 14, 2013 |
| Priority date | — |
| Expiry date | Sep 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B10/00
Abstract
An exemplary aspect of the present invention is an SRAM including: a first gate electrode that constitutes a first load transistor; a second gate electrode that extends in a longitudinal direction of the first gate electrode so as to be spaced apart from the first gate electrode, and constitutes a first drive transistor; a third gate electrode that extends in parallel to the first gate electrode, and constitutes a second load transistor; a first p-type diffusion region that is formed so as to intersect with the third gate electrode, and constitutes the second load transistor; and a first shared contact formed over the first and second gate electrodes and the first p-type diffusion region. The first p-type diffusion region extends to the vicinity of a first gap region between the first and second gate electrodes, and is not formed in the first gap region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.