Semiconductor device including a magnetic tunnel junction and method of manufacturing the same
US8441083B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2012 |
| Grant date | May 14, 2013 |
| Priority date | — |
| Expiry date | Apr 30, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
To provide a semiconductor device that has an improved adhesion between a bottom conductive layer and a protection film protecting an MTJ element.This semiconductor device includes a bottom electrode formed over a semiconductor substrate, an MTJ element part formed over a part of the bottom electrode by lamination of a bottom magnetic film, an insulating film, a top magnetic film, and a top electrode in this order, and a protection film formed over the bottom electrode so as to cover the MTJ element part, wherein the bottom electrode is formed by amorphized metal nitride and the protection film is formed by an insulating film containing nitrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.