Methods to form memory devices having a capacitor with a recessed electrode

US8441097B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Joseph M. Steigerwald · Forest Grove, US
• Nick Lindert · Beaverton, US
• Steven J. Keating · Beaverton, US
• Christopher J. Jezewski · Portland, US
• Timothy E. Glassman · Portland, US

Key dates

• Filing date: Dec 23, 2009
• Grant date: May 14, 2013
• Expiry date: Jun 1, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/813

Abstract

Methods to form memory devices having a MIM capacitor with a recessed electrode are described. In one embodiment, a method of forming a MIM capacitor with a recessed electrode includes forming an excavated feature defined by a lower portion that forms a bottom and an upper portion that forms sidewalls of the excavated feature. The method includes depositing a lower electrode layer in the feature, depositing an electrically insulating layer on the lower electrode layer, and depositing an upper electrode layer on the electrically insulating layer to form the MIM capacitor. The method includes removing an upper portion of the MIM capacitor to expose an upper surface of the electrode layers and then selectively etching one of the electrode layers to recess one of the electrode layers. This recess isolates the electrodes from each other and reduces the likelihood of a current leakage path between the electrodes.