Electrical overstress protection using through-silicon-via (TSV)
US8441104B1 · kind B1 · utility
18Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2011 |
| Grant date | May 14, 2013 |
| Priority date | — |
| Expiry date | Nov 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/611
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device formed on a substrate includes a first diode junction formation, a second diode junction formation, and at least one through-silicon-via (TSV), in which a cathode and an anode of the first diode are cross-connected to an anode and cathode of the second diode through the at least one TSV for achieving electrical robustness in through-silicon-via based integrated circuits, including photosensitive devices and circuits for signal processing applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.