Mode-locked semiconductor laser device and driving method thereof
US8442079B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 25, 2011 |
| Grant date | May 14, 2013 |
| Priority date | — |
| Expiry date | Jun 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/22
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a driving method of a mode-locked semiconductor laser device comprising a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer having an emission region and a second compound semiconductor layer are successively laminated, a second electrode, and a first electrode. The laminated structure is formed on a compound semiconductor substrate having polarity, the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer. The well layer has a depth of 1 nm or more and 10 nm or less. The barrier layer has an impurity doping density of 2×1018 cm−3 or more and 1×1020 cm−3 or less. An optical pulse is generated in the emission region by passing a current from the second electrode to the first electrode via the laminated structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.