High temperature sheet handling system and methods
US8443863B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2008 |
| Grant date | May 21, 2013 |
| Priority date | — |
| Expiry date | Feb 27, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T156/1944
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus provide for imparting a controlled supply of gas to at least one Bernoulli chuck to provide a balanced draw and repellant gas flow to a material sheet; and at least one of: elevating a temperature of the supply of gas to the at least one Bernoulli chuck such that the gas flow to the material sheet is provided at the elevated temperature providing a stream of gas to an insulator substrate to promote separation of an exfoliation layer from a donor semiconductor wafer, and providing a stream of gas to a junction of the insulator substrate and any support structure to promote separation of the insulator substrate and the supporting structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.