Manufacturing method of a semiconductor component with a nanowire channel
US8445348B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2012 |
| Grant date | May 21, 2013 |
| Priority date | — |
| Expiry date | Mar 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/121
Abstract
The present invention discloses a manufacturing method of a semiconductor component with a nanowire channel. The method comprises the following steps. The step of forming a stack structure on a substrate is performed. A semiconductor layer is formed on the substrate and the stack structure and further filled into the fillister. The semiconductor layer is patterned to form a source area and a drain area, and the channel region is located between the source area and the drain area. The semiconductor layer located outside the source area, the drain area and the fillister will be removed. And then, the stack structure is then removed. Therefore, the semiconductor layer filled inside the fillister will be exposed to be as a channel. A gate oxide layer is formed to cover the channel, and a gate layer is then formed on the gate oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.