Method of enhancing the conductive and optical properties of deposited indium tin oxide (ITO) thin films
US8445373B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 2009 |
| Grant date | May 21, 2013 |
| Priority date | — |
| Expiry date | May 21, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Certain example embodiments of this invention relate to a method of activating an indium tin oxide (ITO) thin film deposited, directly or indirectly, on a substrate. The ITO thin film is baked in a low oxygen environment at a temperature of at least 450 degrees C. for at least 10 minutes so as to provide for (1) a post-baked resistivity of the ITO thin film that is below a resistivity of a corresponding air-baked ITO thin film, (2) a post-baked visible spectrum absorption and transmission of the ITO thin film that respectively are below and above the absorption and transmission of the corresponding air-baked ITO thin film, and (3) a post-baked infrared reflectivity of the ITO thin film that is above the reflectivity of the corresponding air-baked ITO thin film. The substrate with the activated ITO thin film may be used in a photovoltaic device, for example.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.