Methods for etching carbon nano-tube films for use in non-volatile memories
US8445385B2 · kind B2 · utility
2Cited by
7References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2009 |
| Grant date | May 21, 2013 |
| Priority date | — |
| Expiry date | Oct 3, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/025
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Memory cells, and methods of forming such memory cells are provided that include a steering element coupled to a carbon-based reversible resistivity-switching material. In particular embodiments, methods in accordance with this invention etch a carbon nano-tube (“CNT”) film formed over a substrate, the methods including coating the substrate with a masking layer, patterning the masking layer, and etching the CNT film through the patterned masking layer using a non-oxygen based chemistry. Other aspects are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.