High dynamic range image sensor with in pixel memory
US8445828B2 · kind B2 · utility
10Cited by
6References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 1, 2010 |
| Grant date | May 21, 2013 |
| Priority date | — |
| Expiry date | May 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/771
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A high dynamic range CMOS image sensor is disclosed. The pixels of the image sensor incorporate in-pixel memory. Further, the pixels may have varying integration periods. The integration periods are determined, in part, by the signal stored in the in-pixel memory from previous integration periods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.