Nonvolatile programmable switch device using phase-change memory device and method of manufacturing the same
US8445887B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2009 |
| Grant date | May 21, 2013 |
| Priority date | — |
| Expiry date | Jan 19, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A nonvolatile programmable switch device using a phase-change memory device and a method of manufacturing the same are provided. The switch device includes a substrate, a first metal electrode layer disposed on the substrate and including a plurality of terminals, a phase-change material layer disposed on the substrate and having a self-heating channel structure, the phase-change material layer having a plurality of introduction regions electrically contacting the terminals of the first metal electrode layer and a channel region interposed between the introduction regions, an insulating layer disposed on the first metal electrode layer and the phase-change material layer, a via hole disposed on the first metal electrode layer, and a second metal electrode layer disposed to fill the via hole. The switch device performs memory operations using resistive heating of a phase-change material without an additional heater electrode, thereby minimizing thermal loss due to thermal conductivity of a metal electrode to reduce power consumption of the switch device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.