Patent · US Active

High-performance gate oxides such as for graphene field-effect transistors or carbon nanotubes

US8445893B2 · kind B2 · utility

15Cited by

2References

18Claims

0Family size

Assignee

The Trustees of Columbia University in the City of New York · US

Inventors

Inanc Meric · New York, US
Kenneth L. Shepard · Johnstown, US
Noah J. Tremblay · New York, US
Philip Kim · Cambridge, US
Colin Nuckolls · New York, US

Key dates

Filing date	Jul 19, 2010
Grant date	May 21, 2013
Priority date	—
Expiry date	Jan 15, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/882
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An apparatus or method can include forming a graphene layer including a working surface, forming a polyvinyl alcohol (PVA) layer upon the working surface of the graphene layer, and forming a dielectric layer upon the PVA layer. In an example, the PVA layer can be activated and the dielectric layer can be deposited on an activated portion of the PVA layer. In an example, an electronic device can include such apparatus, such as included as a portion of graphene field-effect transistor (GFET), or one or more other devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.