Transparent rectifying metal/metal oxide/semiconductor contact structure and method for the production thereof and use

US8445904B2 · kind B2 · utility

Assignee

• UNIVERSITÄT LEIPZIG · DE

Inventors

• Marius Grundmann · Leipzig, DE
• Heiko Frenzel · Leipzig, DE
• Alexander Lajn · Leipzig, DE
• Holger von Wenckstern · Leipzig, DE

Key dates

• Filing date: Jun 21, 2010
• Grant date: May 21, 2013
• Expiry date: Jun 21, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

The invention relates to transparent rectifying contact structures for application in electronic devices, in particular appertaining to optoelectronics, solar technology and sensor technology, and also a method for the production thereof. The transparent rectifying contact structure according to the invention has the following constituents: a) a transparent semiconductor, b) a transparent, non-insulating and non-conducting layer composed of metal oxide, metal sulphide and/or metal nitride, the resistivity of which is preferably in the range of 102 Ωcm to 107 Ωcm and c) a layer composed of a transparent electrical conductor wherein the layer b) is formed between the semiconductor a) and the layer c) and the composition of the layer b) is defined in greater detail in the description of the patent.