Asymmetrically recessed high-power and high-gain ultra-short gate HEMT device

US8445941B2 · kind B2 · utility

Assignee

• BAE Systems Information and Electronic Systems Integration Inc. · US

Inventors

• Dong Xu · Shanghai, CN
• Xiaoping Yang · Streetsboro, US
• Wendell Kong · Liverpool, US
• Lee M. Mohnkern · Bedford, US
• Phillip M. Smith · Hollis, US
• Pane-chane Chao · Nashua, US

Key dates

• Filing date: Aug 5, 2009
• Grant date: May 21, 2013
• Expiry date: Sep 27, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/4738

Abstract

A high-power and high-gain ultra-short gate HEMT device has exceptional gain and an exceptionally high breakdown voltage provided by an increased width asymmetric recess for the gate electrode, by a composite channel layer including a thin indium arsenide layer embedded in the indium gallium arsenide channel layer and by double doping through the use of an additional silicon doping spike. The improved transistor has an exceptional 14 dB gain at 110 GHz and exhibits an exceptionally high 3.5-4 V breakdown voltage, thus to provide high gain, high-power and ultra-high frequency in an ultra-short gate device.