Electronic circuit having a diode-connected MOS transistor with an improved efficiency
US8445947B2 · kind B2 · utility
2Cited by
10References
33Claims
0Family size
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Key dates
| Filing date | Jul 2, 2009 |
| Grant date | May 21, 2013 |
| Priority date | — |
| Expiry date | Jan 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An integrated circuit including a semiconductor layer; and a MOS transistor including first and second power terminals and a bulk insulated from the semiconductor layer, the first power terminal being intended to receive an oscillating signal, the transistor gate and the bulk being connected to the first power terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.