Lateral avalanche photodiode structure
US8445992B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2011 |
| Grant date | May 21, 2013 |
| Priority date | — |
| Expiry date | Oct 7, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A lateral avalanche photodiode structure including a substrate, a PN diode and a metal layer is provided. The substrate has at least one first electrode area, at least one light receiving area, and at least one second electrode area which are arranged horizontally. The first electrode area is also an avalanche area, and the light receiving area is between the first electrode area and the second electrode area. The PN diode is disposed in the substrate in the first electrode area. The metal layer is disposed on the substrate and covers the first electrode area and the second electrode area, but does not cover the light receiving area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.