Semiconductor device including double-sided multi-electrode chip embedded in multilayer wiring substrate
US8446003B2 · kind B2 · utility
11Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 24, 2010 |
| Grant date | May 21, 2013 |
| Priority date | — |
| Expiry date | Jul 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a multilayer wiring substrate and a double-sided multi-electrode chip. The double-sided multi-electrode chip includes a semiconductor chip and has multiple electrodes on both sides of the semiconductor chip. The double-sided multi-electrode chip is embedded in the multilayer wiring substrate in such a manner that the double-sided multi-electrode chip is not exposed outside the multilayer wiring substrate. The electrodes of the double-sided multi-electrode chip are connected to wiring layers of the multilayer wiring substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.