Overwritable nonvolatile memory device and related data write method
US8448043B2 · kind B2 · utility
5Cited by
6References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 12, 2011 |
| Grant date | May 21, 2013 |
| Priority date | — |
| Expiry date | Nov 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03M13/19
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device comprises overwritable memory cells. In an overwrite operation, data is read from a selected region of the nonvolatile memory device and combined with overwrite data to produce combined data. An error correction code is then generated for the combined data and the overwrite data and the error correction code are stored in the selected region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.