Buffer layers for L10 thin film perpendicular media
US8449730B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2009 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Oct 14, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/8404
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A process of fabricating a perpendicular magnetic recording medium. In one embodiment, the process may comprise forming a metallic buffer layer with a (002) texture on an underlayer using a deposition process performed at a temperature below 30° C. The underlayer may have a crystalline (001) texture. The process may further comprise forming a perpendicular magnetic recording layer on top of the metallic buffer layer using a deposition process performed at a temperature above 350° C. The magnetic recording layer may comprise a magnetic material with a L10 crystalline structure and with a c-axis perpendicular to a plane of the perpendicular magnetic recording layer. The process may further comprise removing metal of the metallic buffer layer from a top surface of the perpendicular magnetic recording layer that moved to the top surface of the perpendicular magnetic recording layer during the forming of the perpendicular magnetic recording layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.