Semiconductor device and method for manufacturing the same
US8450144B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2010 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Mar 5, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/131
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object of an embodiment of the present invention is to provide a semiconductor device provided with a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor layer including silicon oxide, an insulating layer between the gate electrode and the oxide semiconductor layer, and source and drain regions between the oxide semiconductor layer including silicon oxide and source and drain electrode layers. The source and drain regions are formed using a degenerate oxide semiconductor material or a degenerate oxynitride material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.