Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device
US8450158B2 · kind B2 · utility
2Cited by
32References
18Claims
0Family size
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Key dates
| Filing date | Oct 27, 2011 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Oct 27, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02A40/28
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A seed crystal which includes mixed phase grains including an amorphous silicon region and a crystallite which is a microcrystal that can be regarded as a single crystal is formed on an insulating film by a plasma CVD method under a first condition that enables mixed phase grains having high crystallinity and high uniformity of grain sizes to be formed at a low density, and then a microcrystalline semiconductor film is formed to be stacked on the seed crystal by a plasma CVD method under a second condition that enables the mixed phase grains to grow to fill a space between the mixed phase grains.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.