Light emitting diode manufacturing method
US8450445B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 17, 2011 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Nov 3, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/855
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A method of making a light emitting diode (LED) having an optical element is provided, comprising: providing a curable liquid polysiloxane/TiO2 composite, which exhibits a refractive index of >1.61 to 1.7 and which is a liquid at room temperature and atmospheric pressure; providing a semiconductor light emitting diode die having a face, wherein the semiconductor light emitting diode die emits light through the face; contacting the semiconductor light emitting diode die with the curable liquid polysiloxane/TiO2 composite; and, curing the curable liquid polysiloxane/TiO2 composite to form an optical element; wherein at least a portion of the optical element is adjacent to the face.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.