Frontside-illuminated inverted quantum well infrared photodetector devices
US8450720B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2012 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Sep 6, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/21
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of fabricating a frontside-illuminated inverted quantum well infrared photodetector may include providing a quantum well wafer having a bulk substrate layer and a quantum material layer, wherein the quantum material layer includes a plurality of alternating quantum well layers and barrier layers epitaxially grown on the bulk substrate layer. The method further includes applying at least one frontside common electrical contact to a frontside of the quantum well wafer, bonding a transparent substrate to the frontside of the quantum well wafer, thinning the bulk substrate layer of the quantum well wafer, and etching the quantum material layer to form quantum well facets that define at least one pyramidal quantum well stack. A backside electrical contact may be applied to the pyramidal quantum well stack. In one embodiment, a plurality of quantum well stacks is bonded to a read-out integrated circuit of a focal plane array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.