Patent · US Active

Semiconductor device and method of manufacturing the same

US8450752B2 · kind B2 · utility

1Cited by
2References
22Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 31, 2011
Grant dateMay 28, 2013
Priority date
Expiry dateMay 23, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S5/18375
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

The present invention provides a semiconductor device realizing reduced occurrence of a defect such as a crack at the time of adhering elements to each other. The semiconductor device includes a first element and a second element adhered to each other. At least one of the first and second elements has a pressure relaxation layer on the side facing the other of the first and second elements, and the pressure relaxation layer includes a semiconductor part having a projection/recess part including a projection projected toward the other element, and a resin part filled in a recess in the projection/recess part.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.