Strain-compensated infrared photodetector and photodetector array
US8450773B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 15, 2010 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Jun 24, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
Abstract
A photodetector is disclosed for the detection of infrared light with a long cutoff wavelength in the range of about 4.5-10 microns. The photodetector, which can be formed on a semiconductor substrate as an nBn device, has a light absorbing region which includes InAsSb light-absorbing layers and tensile-strained layers interspersed between the InAsSb light-absorbing layers. The tensile-strained layers can be formed from GaAs, InAs, InGaAs or a combination of these III-V compound semiconductor materials. A barrier layer in the photodetector can be formed from AlAsSb or AlGaAsSb; and a contact layer in the photodetector can be formed from InAs, GaSb or InAsSb. The photodetector is useful as an individual device, or to form a focal plane array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.