Semiconductor device
US8450783B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2010 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | May 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The semiconductor device includes a source line, a bit line, a signal line, a word line, memory cells connected in parallel between the source line and the bit line, a first driver circuit electrically connected to the source line and the bit line through switching elements, a second driver circuit electrically connected to the source line through a switching element, a third driver circuit electrically connected to the signal line, and a fourth driver circuit electrically connected to the word line. The memory cell includes a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, and a capacitor. The second transistor includes an oxide semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.