Nonvolatile semiconductor memory and method of manufacturing the same
US8450787B2 · kind B2 · utility
0Cited by
3References
12Claims
0Family size
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Key dates
| Filing date | Oct 20, 2011 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Oct 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/35
Abstract
A nonvolatile semiconductor memory has a semiconductor substrate, a first insulating film formed on a channel region on a surface portion of the semiconductor substrate, a charge accumulating layer formed on the first insulating film, a second insulating film formed on the charge accumulating layer, a control gate electrode formed on the second insulating film, and a third insulating film including an Si—N bond that is formed on a bottom surface and side surfaces of the charge accumulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.