Semiconductor module

US8450793B2 · kind B2 · utility

Assignee

• ABB TECHNOLOGY AG · CH

Inventors

• Munaf Rahimo · Uezwil, CH
• Jan Vobecky · Lenzburg, CH
• Wolfgang Janisch · Stuttgart, DE
• Arnost Kopta · Zürich, CH
• Frank Ritchie · Courtice, CA

Key dates

• Filing date: Apr 2, 2010
• Grant date: May 28, 2013
• Expiry date: Dec 10, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/142

Abstract

A controlled-punch-through semiconductor device with a four-layer structure is disclosed which includes layers of different conductivity types, a collector on a collector side, and an emitter on an emitter side which lies opposite the collector side. The semiconductor device can be produced by a method performed in the following order: producing layers on the emitter side of wafer of a first conductivity type; thinning the wafer on a second side; applying particles of the first conductivity type to the wafer on the collector side for forming a first buffer layer having a first peak doping concentration in a first depth, which is higher than doping of the wafer; applying particles of a second conductivity type to the wafer on the second side for forming a collector layer on the collector side; and forming a collector metallization on the second side. At any stage particles of the first conductivity type can be applied to the wafer on the second side for forming a second buffer layer with a second peak doping concentration lower than the first peak doping concentration of the first buffer layer, but higher than the doping of the wafer. A third buffer layer can be arranged between the…