Semiconductor structure with a planar Schottky contact

US8450798B2 · kind B2 · utility

Assignee

• FAIRCHILD SEMICONDUCTOR CORPORATION · US

Inventor

• Fred Session · Sandy, US

Key dates

• Filing date: Oct 21, 2011
• Grant date: May 28, 2013
• Expiry date: Oct 21, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/64

Abstract

A monolithically integrated trench FET and Schottky diode includes a plurality of trenches extending into a FET region and a Schottky region of a semiconductor layer. A trench in the Schottky region includes a dielectric layer lining the trench sidewalls, and a conductive electrode having a top surface that is substantially coplanar with a top surface of the semiconductor layer adjacent the trench. An interconnect layer electrically contacts the top surface of the semiconductor layer adjacent the trench so as to form a Schottky contact with the top surface of the semiconductor layer adjacent the trench. A surface of the semiconductor layer in the Schottky region is lower relative to a surface of the semiconductor layer in the FET region.