Patent · US Active

Power switch component having improved temperature distribution

US8450860B2 · kind B2 · utility

0Cited by

1References

7Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Thomas Jacke · Lörrach, DE
Christian Foerster · Reutlingen, DE
Timm Hoehr · Reutlingen, DE
Holger Heinisch · Reutlingen, DE
Christian Pluntke · Hechingen, DE
Joachim Joos · Gerlingen, DE

Key dates

Filing date	Feb 11, 2011
Grant date	May 28, 2013
Priority date	—
Expiry date	Feb 20, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/14
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A power switch component having a semiconductor switch and a contacting applied to a contact zone of the semiconductor switch is introduced. The contact zone has a semiconductor layer and a metal plating applied to the semiconductor layer. The semiconductor layer has at least one conducting region and at least one non-conducting region situated directly under the metal plating.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.