TDI image sensor in CMOS technology with high video capture rate
US8451354B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 9, 2011 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Aug 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/46
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An time-delay-integration image sensor comprises a matrix of photosensitive pixels organized in rows and columns, a first matrix of memory cells associated with control and adding means to store accumulated brightness levels of several rows of pixels in a row of memory cells. The first memory cell matrix is provided with the control and adding means to store in its rows accumulated brightness levels of the rows of a first half of the pixel matrix. The sensor comprises a second memory cell matrix associated with the control and adding means to store accumulated brightness levels of the rows of the second half of the pixel matrix in a row of the second memory cell matrix. Means are provided for adding the levels accumulated in a row of the first memory cell matrix to the levels accumulated in a corresponding row of the second memory cell matrix.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.