Image sensor with a light receiving region and a recessed charge transmission unit and image sensing system including the same
US8451362B2 · kind B2 · utility
5Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2009 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Aug 10, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/813
Abstract
An image sensor includes a conductive well in a semiconductor substrate, a photo sensitive device (PSD) in the semiconductor substrate below the conductive well, the PSD and conductive well overlapping each other, and a charge transmission unit in the semiconductor substrate and adjacent to the conductive well, the charge transmission unit having a structure of a recessed gate and being positioned in a recess region of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.