Overheat protection circuit and power supply integrated circuit
US8451571B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 2010 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Jun 24, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05F1/569
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
Provided is a power supply integrated circuit including an overheat protection circuit with high detection accuracy. The overheat protection circuit includes: a current generation circuit including: a first metal oxide semiconductor (MOS) transistor including a gate terminal and a drain terminal that are connected to each other, the first MOS transistor operating in a weak inversion region; a second MOS transistor including a gate terminal connected to the gate terminal of the first MOS transistor, the second MOS transistor having the same conductivity type as the first MOS transistor and operating in a weak inversion region; and a first resistive element connected to a source terminal of the second MOS transistor; and a comparator for comparing a reference voltage having positive temperature characteristics and a temperature voltage having negative temperature characteristics, which are obtained based on a current generated by the current generation circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.