Variable resistance memory devices and methods of programming variable resistance memory devices
US8451645B2 · kind B2 · utility
7Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2010 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Apr 27, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0066
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A variable resistance memory device includes a variable resistance memory cell, and a by-pass circuit configured to electrically by-pass a programming pulse supplied to the variable resistance memory cell after a resistive state of the variable resistance memory cell has changed in response to the programming pulse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.