High efficiency III-nitride light-emitting diodes
US8451877B1 · kind B1 · utility
16Cited by
1References
13Claims
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Key dates
| Filing date | Mar 17, 2011 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Jun 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8215
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.