Frequency selective infrared sensors
US8452134B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2010 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Jul 7, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/1847
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A frequency selective infrared (IR) photodetector having a predetermined frequency band. The exemplary frequency selective photodetector includes: a dielectric IR absorber having a first surface and a second surface substantially parallel to the first surface; an electrode electrically coupled to the first surface of the dielectric IR absorber; and a frequency selective surface plasmonic (FSSP) structure formed on the second surface of the dielectric IR absorber. The FSSP structure is designed to selectively transmit radiation in the predetermined frequency band that is incident on the FSSP structure substantially independent of the angle of incidence of the incident radiation on the FSSP structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.