Apparatus and methods for generating row-specific reading thresholds in flash memory
US8453022B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 17, 2008 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Dec 5, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2212/1032
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for generating a set of at least one row-specific reading threshold for reading at least portions of pages of data within an erase sector of a flash memory device, the method comprising predetermining at least one initial reading threshold; performing the following steps for at least one current logical page: generating bit error characterizing information regarding at least one corresponding bit error within at least one cell representing at least a logical portion of at least one successfully reconstructed previous logical page; and computing at least one row-specific reading threshold based on said bit error characterizing information and on a previous threshold initially comprising said initial threshold and subsequently comprising a row-specific reading threshold computed for a successfully reconstructed previous logical page; and reading at least a portion of said current logical page using said at least one row-specific reading threshold.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.