Alloyed semiconductor nanocrystals
US8454927B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 4, 2005 |
| Grant date | Jun 4, 2013 |
| Priority date | — |
| Expiry date | May 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to methods for preparing 3-element semiconductor nanocrystals of the formula WYxZ(1-x), wherein W is a Group II element, Y and Z are different Group VI elements, and 0<X<1, comprising dissolving a Group II element, a first Group VI element, and a second Group VI element in a one or more solvents. The Group II, VI and VI elements are combined to provide a II:VI:VI SCN precursor solution, which is heated to a temperature sufficient to produce semiconductor nanocrystals of the formula WYxZ(1-x). The solvent used to dissolve the Group II element comprises octadecene and a fatty acid. The solvent used to dissolve the Group VI elements comprises octadecene. The invention also includes semiconductor nanocrystals prepared according to the disclosed methods, as well as methods of using the semiconductor nanocrystals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.