Semiconductor film, method for manufacturing the same, and power storage device
US8455044B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2011 |
| Grant date | Jun 4, 2013 |
| Priority date | — |
| Expiry date | Nov 21, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided are a semiconductor film including silicon microstructures formed at high density, and a manufacturing method thereof. Further, provided are a semiconductor film including silicon microstructures whose density is controlled, and a manufacturing method thereof. Furthermore, a power storage device with improved charge-discharge capacity is provided. A manufacturing method in which a semiconductor film with a silicon layer including silicon structures is formed over a substrate with a metal surface is used. The thickness of a silicide layer formed by reaction between the metal and the silicon is controlled, so that the grain sizes of silicide grains formed at an interface between the silicide layer and the silicon layer are controlled and the shapes of the silicon structures are controlled. Such a semiconductor film can be applied to an electrode of a power storage device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.