Patent · US Active

Apparatuses and methods for maskless mesoscale material deposition

US8455051B2 · kind B2 · utility

46Cited by
210References
31Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 22, 2010
Grant dateJun 4, 2013
Priority date
Expiry dateApr 28, 2031

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB05D5/00
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance—the orifice to substrate distance may be several millimeters—and direct write onto non-planar surfaces is possible.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.