Sputtering target, method for forming amorphous oxide thin film using the same, and method for manufacturing thin film transistor
US8455371B2 · kind B2 · utility
31Cited by
5References
18Claims
0Family size
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Key dates
| Filing date | May 22, 2009 |
| Grant date | Jun 4, 2013 |
| Priority date | — |
| Expiry date | May 22, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24355
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Disclosed is a sputtering target having a good appearance, which is free from white spots on the surface. The sputtering target is characterized by being composed of an oxide sintered body containing two or more kinds of homologous crystal structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.