Single crystal scintillator material, method for producing same, radiation detector and PET system
US8455833B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Sep 28, 2009 |
| Grant date | Jun 4, 2013 |
| Priority date | — |
| Expiry date | Jul 27, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21K4/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for producing a single crystal scintillator material according to the present invention includes the steps of: providing a solvent including: at least one element selected from the group consisting of Li, Na, K, Rb and Cs; W and/or Mo; B; and oxygen; melting a Ce compound and a Lu compound that have been mixed with the solvent by heating the mixture to a temperature of 800° C. to 1,350° C.; and growing a single crystal by cooling the compounds melted. The single crystal is represented by the compositional formula (CexLu1-x)BO3, in which the mole fraction x of Ce satisfies 0.0001≦x≦0.05.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.