Thin film transistor array panel and method of manufacturing the same
US8455870B2 · kind B2 · utility
5Cited by
0References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2010 |
| Grant date | Jun 4, 2013 |
| Priority date | — |
| Expiry date | Jan 29, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136236
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor array panel includes an insulation substrate. A signal line is formed on the insulation substrate. A thin film transistor is connected to the signal line. A color filter is formed on the substrate. An organic insulator is formed on the color filter and includes a first portion and a second portion having different thicknesses. A light blocking member is formed on the second portion of the organic insulator. A difference between the surface height of the first portion of the organic insulator and the surface height of the second portion of the organic insulator is in the range of about 2.0 μm to 3.0 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.