Light emitting device using GaN LED chip
US8455886B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2012 |
| Grant date | Jun 4, 2013 |
| Priority date | — |
| Expiry date | Mar 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
Abstract
A light emitting device is constituted by flip-chip mounting a GaN-based LED chip. The GaN-based LED chip includes a light-transmissive substrate and a GaN-based semiconductor layer formed on the light-transmissive substrate, wherein the GaN-based semiconductor layer has a laminate structure containing an n-type layer, a light emitting layer and a p-type layer in this order from the light-transmissive substrate side, wherein a positive electrode is formed on the p-type layer, the electrode containing a light-transmissive electrode of an oxide semiconductor and a positive contact electrode electrically connected to the light-transmissive electrode, and the area of the positive contact electrode is half or less of the area of the upper surface of the p-type layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.