Architecture for piezoelectric MEMS devices
US8456061B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2011 |
| Grant date | Jun 4, 2013 |
| Priority date | — |
| Expiry date | Dec 30, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
Abstract
A piezoelectric thin film device comprises a piezoelectric thin film having upper and lower surfaces and a defined tilted crystal morphology, a top electrode disposed on the upper surface, a substrate having a surface morphology that corresponds to the defined crystallographically tilted morphology, and a bottom electrode disposed between and crystallographically linked to both the lower surface of the piezoelectric thin film and the substrate surface, the bottom and top electrodes having a parallel planar configuration relative to the plane of the substrate and the defined crystallographically tilted morphology having a crystallographic c-axis direction oriented at a >0° angle relative to the normal to the plane of the electrodes; and method of making the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.