Method and system for a process sensor to compensate SoC parameters in the presence of IC process manufacturing variations
US8456226B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2012 |
| Grant date | Jun 4, 2013 |
| Priority date | — |
| Expiry date | Jul 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/45048
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Certain aspects of a method and system for a process sensor to compensate SoC parameters in the presence of IC process manufacturing variations are disclosed. Aspects of one method may include determining an amount of process variation associated with at least one transistor within a single integrated circuit. The determined amount of process variation may be compensated by utilizing a process dependent current, a bandgap current, and a current associated with a present temperature of the transistor. The process dependent current, the bandgap current and the current associated with the present temperature of the transistor may be combined to generate an output current. A voltage generated across a variable resistor may be determined based on the generated output current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.