Bulk acoustic wave resonator disposed on a substrate having a buried cavity formed therein providing different substrate thicknesses underneath the resonator
US8456258B2 · kind B2 · utility
1Cited by
1References
12Claims
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Key dates
| Filing date | May 19, 2010 |
| Grant date | Jun 4, 2013 |
| Priority date | — |
| Expiry date | Mar 7, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A resonant device including a stack of a first metal layer, a piezoelectric material layer, and a second metal layer formed on a silicon substrate, a cavity being formed in depth in the substrate, the thickness of the silicon above the cavity having at least a first value in a first region located opposite to the center of the stack, having a second value in a second region located under the periphery of the stack and having at least a third value in a third region surrounding the second region, the second value being greater than the first and the third values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.