Reading a flash memory by joint decoding and cell voltage distribution tracking
US8458563B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2009 |
| Grant date | Jun 4, 2013 |
| Priority date | — |
| Expiry date | Mar 6, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5642
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
To read a plurality of memory cells, each cell is assigned to a respective cell population. A respective value of an operational parameter of each cell is measured. Each cell is assigned an a-priori metric based at least in part on one or more CVD parameter values of the cell's population. The a-priori metrics are decoded. Based at least in part on the resulting a-posteriori metrics, the CVD parameter values are corrected, without repeating the measurements of the cell operational parameter values. The operational parameter values are indicative of bit patterns stored in the cells, and the correction of the CVD parameter values is constrained by requiring the bit patterns collectively to be a valid codeword.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.