Cell library, integrated circuit, and methods of making same
US8458638B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 8, 2011 |
| Grant date | Jun 4, 2013 |
| Priority date | — |
| Expiry date | May 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/903
Abstract
A cell library intended to be used to form an integrated circuit, this library defining a first cell including a first MOS transistor of minimum dimensions, and a second cell including a second MOS transistor of lower leakage current, wherein the second cell takes up the same surface area as the first cell, and the second MOS transistor has a gate of same length as the gate of the first MOS transistor across at least a first width in its central portion, and of greater length across at least a second width on either side of the central portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.