Synchronous pulse plasma etching equipment and method of fabricating a semiconductor device
US8460508B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2009 |
| Grant date | Jun 11, 2013 |
| Priority date | — |
| Expiry date | Jan 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32174
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Synchronous pulse plasma etching equipment includes a first electrode and one or more second electrodes configured to generate plasma in a plasma etching chamber. A first radio frequency power output unit is configured to apply a first radio frequency power having a first frequency and a first duty ratio to the first electrode, and to output a control signal including information about a phase of the first radio frequency power. At least one second radio frequency power output unit is configured to apply a second radio frequency power having a second frequency and a second duty ratio to a corresponding second electrode among the second electrodes. The second radio frequency power output unit is configured to control the second radio frequency power to be synchronized with the first radio frequency power or to have a phase difference from the first radio frequency power in response to the control signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.